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(R)
BUT11A
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s
s s s
STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED
s
APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUT11A is a silicon Multiepitaxial Mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application.
1
3 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 9 5 10 2 4 83 -65 to 150 150 Unit V V V A A A A W o C o C
March 2004
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BUT11A
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CES at T c = 125 o C IC = 0 I B (off) = 0 V BE = 9 V I C = 100 mA 450 Min. Typ. Max. 1 2 10 Unit mA mA mA V
V CEO(sus)* Collector-emitter Sustaining Voltage (I B = 0) V CE(sat)* V BE(sat)* h FE Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Turn on Time Storage Time Fall Time
I C = 2.5 A I C = 2.5 A I C = 5 mA I C = 0.5 A
I B = 0.5 A I B = 0.5 A V CE = 5 V V CE = 5 V 10 10
1.5 1.3 35 35 1 4 0.8
V V
t on ts tf
I C = 2.5 A V CC = 250 V I B = -I B2 = 0.5 A
s s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
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BUT11A
DC Current Gain DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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BUT11A
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUT11A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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